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1. product profile 1.1 general description 150 w ldmos packaged asymmetrical doherty power transistor for base station applications at frequencies from 2496 mhz to 2690 mhz. [1] test signal: is-95 with pilot, paging, sync, 6 tr affic channels with walsh codes 8 - 13; par = 9.7 db at 0.01 % probability. 1.2 features and benefits ? excellent ruggedness ? high efficiency ? low thermal resistance providing excellent thermal stability ? decoupling leads to enable improved video bandwidth ? lower output capacitance for improved performance in doherty applications ? designed for low memory effects prov iding excellent pre-distortability ? internally matched for ease of use ? integrated esd protection ? compliant to restriction of hazardous substances (rohs) directive 2002/95/ec 1.3 applications ? rf power amplifier for w-cdma base statio ns and multi carrier applications in the 2496 mhz to 2690 mhz frequency range blc9g27ls-150av power ldmos transistor rev. 1 ? 6 november 2014 product data sheet table 1. typical performance typical rf performance at t case = 25 ? c in the doherty application demo circuit. test signal f v ds p l(av) g p ? d acpr (mhz) (v) (w) (db) (%) (dbc) is-95 2500 to 2690 28 28.2 14.8 48 ? 40 [1]
blc9g27ls-150av all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all ri ghts reserved. product data sheet rev. 1 ? 6 november 2014 2 of 14 nxp semiconductors blc9g27ls-150av power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values [1] continuous use at maximum temperature will affect the reliability, for details refer to the on-line mtf calculator. 5. thermal characteristics table 2. pinning pin description simplified outline graphic symbol 1 drain1 (main) 2 drain2 (peak) 3 gate1 (main) 4 gate2 (peak) 5 video decoupling (main) 6 video decoupling (peak) 7source [1] d d d table 3. ordering information type number package name description version blc9g27ls-150av - air cavity plastic earless flanged package; 6 leads sot1275-1 table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 5+13v t stg storage temperature ? 65 +150 ?c t j junction temperature [1] - 225 ?c table 5. thermal characteristics symbol parameter conditions typ unit r th(j-case) thermal resistance from junction to case t case =80 ?c; v ds =28v; i dq =300ma; v gs(amp)peak =0.7v p l = 28 w 0.381 k/w p l = 80 w 0.299 k/w blc9g27ls-150av all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all ri ghts reserved. product data sheet rev. 1 ? 6 november 2014 3 of 14 nxp semiconductors blc9g27ls-150av power ldmos transistor 6. characteristics table 6. dc characteristics t j = 25 ? c unless otherwise specified. symbol parameter conditions min typ max unit main device v (br)dss drain-source breakdown voltage v gs =0v; i d =0.6ma 65--v v gs(th) gate-source threshold voltage v ds =10 v; i d =60ma 1.5 2.1 3.1 v v gsq gate-source quiescent voltage v ds =28 v; i d = 360 ma 1.7 2.3 3.3 v i dss drain leakage current v gs =0v; v ds =28v - - 1.4 ? a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v -12- a i gss gate leakage current v gs =11v; v ds = 0 v - - 140 na g fs forward transconductance v ds =10v; i d = 60 ma - 0.55 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =2.1a - 174 385 m ? peak device v (br)dss drain-source breakdown voltage v gs =0v; i d =0.9ma 65--v v gs(th) gate-source threshold voltage v ds =10 v; i d =90ma 1.5 2.2 3.1 v v gsq gate-source quiescent voltage v ds =28 v; i d = 540 ma 1.7 2.4 3.3 v i dss drain leakage current v gs =0v; v ds =28v - - 1.4 ? a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v -18- a i gss gate leakage current v gs =11v; v ds = 0 v - - 140 na g fs forward transconductance v ds =10v; i d = 90 ma - 0.77 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =3.15a - 145 260 m ? table 7. rf characteristics test signal: 1-carrier w-cdma; par = 7.2 db at 0.01 % probability on the ccdf; 3gpp test model 1; 1 - 64 dpch; f 1 = 2496 mhz; f 2 = 2690 mhz; rf performance at v ds =28v; i dq = 400 ma (main); v gs(amp)peak = 0.7 v; t case =25 ? c; unless otherwise specified; in an asymmetrical doherty production test circuit at 2496 mhz to 2690 mhz. symbol parameter conditions min typ max unit g p power gain p l(av) = 28 w 13.3 15 - db rl in input return loss p l(av) =28w - ? 9 ? 6db ? d drain efficiency p l(av) = 28 w 39 44 - % acpr adjacent channel power ratio p l(av) =28w - ? 26 ? 22 dbc table 8. rf characteristics test signal: pulsed cw; t p = 100 ? s; ? = 10 %; f = 2690 mhz; rf performance at v ds = 28 v; i dq = 300 ma (main); v gs(amp)peak = 0.7 v; t case = 25 ? c; unless otherwise specified; in an asymmetrical doherty production test circuit at 2496 mhz to 2690 mhz. symbol parameter conditions min typ max unit p l(3db) output power at 3 db gain compression 116 149 - w blc9g27ls-150av all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all ri ghts reserved. product data sheet rev. 1 ? 6 november 2014 4 of 14 nxp semiconductors blc9g27ls-150av power ldmos transistor 7. test information 7.1 ruggedness in doherty operation the blc9g27ls-150av is capable of withstanding a load mismatch corresponding to a vswr = 10 : 1 through all phases under the following conditions: v ds =28v; i dq = 250 ma (main); v gs(amp)peak =0.7v; p l = 90 w (cw); f = 2500 mhz. 7.2 impedance information [1] z s and z l defined in figure 1 . [2] at 3 db gain compression. [1] z s and z l defined in figure 1 . [2] at 3 db gain compression. table 9. typical impedance of main device measured load-pull data of main device; i dq = 350 ma (main); v ds = 28 v. f z s [1] z l [1] p l [2] ? d [2] g p [2] (mhz) (? ) (? ) (w) (%) (db) maximum power load 2500 2.8 ? j8.4 2.7 ? j8.3 92 60.7 14.4 2600 3.2 ? j8.4 2.7 ? j8.3 89 60.3 15.3 2700 3.7 ? j8.8 2.7 ? j8.3 90 62.6 16.4 maximum drain efficiency load 2500 2.8 ? j8.4 4.8 ? j5.9 64 69.2 16.8 2600 3.2 ? j8.4 4.0 ? j5.6 61 69.4 17.9 2700 3.7 ? j8.8 3.0 ? j6.0 61 69.6 19.0 table 10. typical impedance of peak device measured load-pull data of peak device; i dq = 550 ma (peak); v ds = 28 v. f z s [1] z l [1] p l [2] ? d [2] g p [2] (mhz) (? ) (? ) (w) (%) (db) maximum power load 2500 2.5 ? j8.9 4.7 ? j7.4 123 62.8 15.1 2600 3.2 ? j9.4 4.0 ? j7.6 126 62.6 15.4 2700 3.8 ? j10.6 4.8 ? j8.2 120 60.6 16.0 maximum drain efficiency load 2500 2.5 ? j8.9 3.2 ? j4.3 85 70.1 16.6 2600 3.2 ? j9.4 3.1 ? j4.9 84 70.2 18.0 2700 3.8 ? j10.6 3.5 ? j5.8 92 68.4 18.6 blc9g27ls-150av all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all ri ghts reserved. product data sheet rev. 1 ? 6 november 2014 5 of 14 nxp semiconductors blc9g27ls-150av power ldmos transistor 7.3 recommended impedances for doherty design [1] z s and z l defined in figure 1 . [2] at 3 db gain compression. [3] at p l(av) = 44.5 dbm. [1] z s and z l defined in figure 1 . [2] at 3 db gain compression. [3] at p l(av) = 44.5 dbm. 7.4 vbw in doherty operation the blc9g27ls-150av shows 100 mhz (typical) video bandwidth in doherty demo board in 2600 mhz at v ds =28v; i dq = 250 ma and v gs(amp)peak =0.7v. fig 1. definition of transistor impedance d d i g u d l q = / = 6 j d w h table 11. typical impedance of main device at 1 : 1 load measured load-pull data of main device; i dq = 350 ma (main); v ds = 28 v. f z s [1] z l [1] p l [2] ? d [3] g p [3] (mhz) (? ) (? ) (dbm) (%) (db) 2500 2.8 ? j8.4 3.8 ? j6.9 49.0 44.4 19.0 2600 3.2 ? j8.4 3.8 ? j6.9 48.8 46.3 20.2 2700 3.7 ? j8.8 3.2 ? j7.1 48.8 46.5 21.1 table 12. typical impedance of main device at 1 : 2.5 load measured load-pull data of main device; i dq = 350 ma (main); v ds = 28 v. f z s [1] z l [1] p l [3] ? d [3] g p [3] (mhz) (? ) (? ) (dbm) (%) (db) 2500 2.8 ? j8.4 3.6 ? j3.4 44.5 52.9 20.1 2600 3.2 ? j8.4 3.6 ? j3.4 44.5 53.2 21.4 2700 3.7 ? j8.8 3.3 ? j3.7 44.5 54.1 22.2 blc9g27ls-150av all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all ri ghts reserved. product data sheet rev. 1 ? 6 november 2014 6 of 14 nxp semiconductors blc9g27ls-150av power ldmos transistor 7.5 test circuit printed-circuit board (pcb): rogers ro4350b; ? r = 3.5; thickness = 0.508 mm; thickness copper plating = 35 ? m. see table 13 for a list of components. fig 2. component layout table 13. list of components see figure 2 for component layout. component description value remarks c1, c2, c3, c5, c11, c12 multilayer ceramic chip capacitor 12 pf atc 600f c4, c6, c7, c8, c13, c14, c15, c16 multilayer ceramic chip capacitor 10 ? f murata, smd 1206 c9 multilayer ceramic chip capacitor 3.0 pf atc 600f c10 multilayer ceramic chip capacitor 18 pf atc 600f c17, c18 electroly tic capacitor 2200 ? f, 63 v bccomponents p1, p2, p3, p4, p5 copper foil strip - needed for tuning r1 resistor 50 ? smd 2512 r2, r3 resistor 5.1 ? smd 0805 d d d p p p p p p 5 5 5 & |